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october 2014 docid026702 rev 5 1 / 14 this is information on a product in full production. www.st.com STF5N105K5 n - channel 1050 v, 2.9 typ., 3 a mdmesh? k5 power mosfet in a to - 220fp package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot STF5N105K5 1050 v 3.5 3 a 25 w ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener - protected applications ? switching applications description this n - channel zener - protected power mosfet is designed using sts revolutionary avalanche - rugged very high voltage mdmesh? k5 technology, based on an innovative proprietary vertical structure. the result is a dramatic reduction in on - resistance, and ultra - low gate charge for applications which requir e superior power density and high efficiency. table 1: device summary part number marking package packaging STF5N105K5 5n105k5 to - 220fp tube
contents STF5N105K5 2 / 14 docid026702 rev 5 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 9 4 package mechanical data ................................ ............................. 10 4.1 to - 220fp package mechanical data ................................ .............. 11 5 revision histor y ................................ ................................ ............ 13
STF5N105K5 electrical ratings docid026702 rev 5 3 / 14 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 30 v i d drain current (continuous) at t c = 25 c 3 (1) a i d drain current (continuous) at t c = 100 c 2 (1) a i dm (2) drain current (pulsed) 12 a p tot total dissipation at t c = 25 c 25 w i ar max current during repetitive or single pulse avalanche 1 a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 85 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) peak diode recovery voltage slope 4.5 v/ns dv/dt (4) mosfet dv/dt ruggedness 50 v/ns t j operating junction temperature - 55 to 150 c t stg storage temperature notes: (1) limited only by maximum junction temperature (2) pulse width limited by safe operating area. (3) i sd 3 a, di/dt 100 a/s, v ds(peak) v (br)dss (4) v ds 840 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 5 c/w r thj - amb thermal resistance junction - amb max 62.5 c/w
electrical characteristics STF5N105K5 4 / 14 docid026702 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = 1 ma 1050 v i dss zero gate voltage drain current v gs = 0, v ds = 1050 v 1 a v gs = 0, v ds = 1050 v, tc=125 c 50 a i gss gate body leakage current v ds = 0, v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 1.5 a 2.9 3.5 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs =0, v ds =100 v, f=1 mhz - 210 - pf c oss output capacitance - 16 - pf c rss reverse transfer capacitance - 0.5 - pf c o(tr) (1) equivalent capacitance time related v gs = 0, v ds = 0 to 840 v - 26 - pf c o(er) (2) equivalent capacitance energy related - 10 - pf r g intrinsic gate resistance f = 1mhz open drain - 9 - q g total gate charge v dd = 840 v, i d = 3 a v gs =10 v figure 16: "gate charge test circuit" - 12.5 - nc q gs gate - source charge - 2 - nc q gd gate - drain charge - 9.5 - nc notes: (1) time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss (2) energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 525v, i d = 1.5 a, r g =4.7 , v gs =10 v figure 18: " unclamped inductive load test circuit" - 15.5 - ns t r rise time - 8.5 - ns t d(off) turn - off delay time - 31 - ns t f fall time - 24 - ns
STF5N105K5 electrical characteristics docid026702 rev 5 5 / 14 table 7: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 3 a i sdm source - drain current (pulsed) - 12 a v sd (1) forward on voltage v gs =0, i sd = 3 a - 1.5 v t rr reverse recovery time i sd = 3 a, v dd = 60 v di/dt = 100 a/s, figure 17: " test circuit for inductive load switching and diode recovery times" - 400 ns q rr reverse recovery charge - 2.3 c i rrm reverse recovery current - 12 a t rr reverse recovery time i sd = 3 a,v dd = 60 v di/dt=100 a/s, tj=150 c figure 17: " test circuit for inductive load switching and diode recovery times" - 560 ns q rr reverse recovery charge - 3.1 c i rrm reverse recovery current - 11 a notes: (1) pulsed: pulse duration = 300s, duty cycle 1.5% table 8: gate - source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate - source breakdown voltage i gs = 1ma, i d =0 30 - - v the built - in back - to - back zener diodes have specifically been designed to enhance the device's esd capability. in this respect the zener voltage is appropriate to achieve an efficient and cost - effective intervention to protect the device's integrity. these integrated zener diodes thus a void the usage of external components.
electrical characteristics STF5N105K5 6 / 14 docid026702 rev 5 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance r ds(on) 1.5 1 0 2 i d (a) ( ) 1 3 2 v gs =10v 4 2.5 3 3.5 4 gipg290820141400fsr 10 6 4 2 0 0 4 8 2 6 8 400 200 0 600 800 q g (nc) v gs (v) v ds v ds (v) 1200 12 10 v ds =840v i d =3 a gipg290820141348fsr i d 4 2 0 5 7 v gs (v) 9 (a) 6 8 10 1 3 5 v ds =20v gipg290820141334fsr i d 5 3 0 0 5 v ds (v) 10 (a) 15 6v 7v v gs =10, 1 1v 2 4 6 8v 9v 20 1 gipg290820141204fsr k 10 -4 t p (s) 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 gc20940
STF5N105K5 electrical characteristics docid026702 rev 5 7 / 14 figure 8 : capacitance variations figure 9 : maximum avalanche energy figure 10 : normalized gate threshold voltage vs temperature figure 11 : normalized on - resistance vs temperature figure 12 : normalized v(br)dss vs temperature figure 13 : source - drain diode forward characteristics c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 gipg290820141409fsr e as 0 40 t j (c) (mj) 20 100 60 80 0 10 20 30 40 120 140 50 60 70 80 gipg290820141445fsr 1.1 0.8 0.6 0.4 t j (c) 0.5 0.7 0.9 1 1.2 -100 0 -50 100 50 150 v gs(th) (norm) am18082v1 i d =100 a v sd 0 1 i sd (a) (v) 0.5 1.5 2 0.5 0.6 0.7 0.8 t j =-50c t j =150c t j =25c 0.9 1 2.5 3 gipg290820141432fsr v (br)dss -100 0 t j (c) (norm) -50 50 100 0.85 0.9 0.95 1 1.05 1.1 i d =1m a am18083v1
electrical characteristics STF5N105K5 8 / 14 docid026702 rev 5 figure 14 : output capacitance stored energy vs temperature e oss 0 0 v ds (v) (j) 400 200 2 600 800 4 gipg290820141419fsr
STF5N105K5 test circuits docid026702 rev 5 9 / 14 3 test circuits figure 15 : switching times test circuit for resistive load figure 16 : gate charge test circuit figure 17 : test circuit for inductive load switching and diode recovery times figure 18 : unclamped inductive load test circuit figure 19 : unclamped inductive waveform figure 20 : switching time waveform
package mechanical data STF5N105K5 10 / 14 docid026702 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
STF5N105K5 package mechanical data docid026702 rev 5 11 / 14 4.1 to - 220fp package mechanical data figure 21 : to - 220fp package outline
package mechanical data STF5N105K5 12 / 14 docid026702 rev 5 table 9: to - 220fp mechanical data dim. mm min. typ. max. a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
STF5N105K5 revision history docid026702 rev 5 13 / 14 5 revision history table 10: document revision history date revision changes 17 - jul - 2014 1 first release. 01 - sep - 2014 2 document status promoted from preliminary to production data. inserted section 3.1: "electrical characteristics (curves)" . minor text changes. 02 - sep - 2014 3 updated title in cover page. 03 - oct - 2014 4 updated: figure 3: "thermal impedance" , figure 6: "gate charge vs gate - source voltage" and figure 8: "capacitance variations" 15 - oct - 2014 5 updated table 2: "absolute maximum ratings"
STF5N105K5 14 / 14 docid026702 rev 5 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obt ain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics C all rights reserved

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